7-115 7 low threshold TP0606 note 1: see package outline section for dimensions. note 2: see array section for quad pinouts. p-channel enhancement-mode vertical dmos fets package options low threshold dmos technology these low threshold enhancement-mode (normally-off) transis- tors utilize a vertical dmos structure and supertex's well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. applications n n logic level interfaces C ideal for ttl and cmos n n solid state relays n n battery operated systems n n photo voltaic drives n n analog switches n n general purpose line drivers n n telecom switches features n n low threshold -2.4v max n n high input impedance n n low input capacitance 80pf typical n n fast switching speeds n n low on resistance n n free from secondary breakdown n n low input and output leakage n n complementary n- and p-channel devices to-92 s g d bv dss /r ds(on) i d(on) v gs(th) bv dgs (max) (min) (max) to-92 -60v 3.5 w -1.5a -2.4v TP0606n3 order number / package ordering information
7-116 package i d (continuous)* i d (pulsed) power dissipation q jc q ja i dr *i drm @ t c = 25 c c/w c/w to-92 -0.5a -3.5a 1w 125 170 -0.5a -3.5a * i d (continuous) is limited by max rated t j . TP0606 thermal characteristics electrical characteristics (@ 25 c unless otherwise specified) symbol parameter min typ max unit conditions bv dss -60 v gs(th) gate threshold voltage -1.0 -2.4 v v gs = v ds , i d = -1.0ma d v gs(th) change in v gs(th) with temperature -5.0 mv/ cv gs = v ds , i d = -1.0ma i gss gate body leakage -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current -10 m av gs = 0v, v ds = max rating -1.0 ma v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current -0.4 -0.6 v gs = -5v, v ds = -25v -1.5 -2.5 v gs = -10v, v ds = -25v r ds(on) 5.0 7.0 v gs = -5v, i d = -250ma 3.0 3.5 v gs = -10v, i d = -0.75a d r ds(on) change in r ds(on) with temperature 1.7 %/ cv gs = -10v, i d = -0.75a g fs forward transconductance 300 400 m v ds = -25v, i d = -0.75a c iss input capacitance 80 150 c oss common source output capacitance 50 85 pf c rss reverse transfer capacitance 15 35 t d(on) turn-on delay time 10 t r rise time 15 t d(off) turn-off delay time 20 t f fall time 15 v sd diode forward voltage drop -1.8 v v gs = 0v, i sd = -1.0a t rr reverse recovery time 300 ns v gs = 0v, i sd = -1.0a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 m s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. a v gs = 0v, v ds = -25v f = 1 mhz v dd = -25v ns i d = -1.0a r gen = 25 w vv gs = 0v, i d = -2.0ma drain-to-source breakdown voltage static drain-to-source on-state resistance switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v w w
7-117 7 output characteristics -5 -4 -3 -2 -1 0 0 -10 -20 -30 -50 -40 saturation characteristics 0 -2 -4 -6 -10 -8 maximum rated safe operating area -1 -1000 -100 -10 -0.1 -1.0 -10 -0.01 thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 transconductance vs. drain current 0.6 0.5 0.4 0.3 0.2 0 -2.8 -0.8 -1.6 -2.4 -3.2 power dissipation vs. case temperature 0 150 100 50 50 40 30 20 10 125 75 25 v ds = -25v t c = 25 c 0 0 to-92 (dc) 0 -6v -4v -5 -4 -3 -2 -1 0 -6v -8v -4v -8v -0.4 -1.2 -2.0 to-92 v ds (volts) v ds (volts) i d (amperes) i d (amperes) v gs = -10v v gs = -10v v ds = -25v t a = -55 c t a = 25 c t a = 150 c g fs (siemens) i d (amperes) t c ( c) p d (watts) v ds (volts) i d (amperes) t p (seconds) to-92 p d = 1w t c = 25 c TP0606 typical performance curves
7-118 gate drive dynamic characteristics on-resistance vs. drain current transfer characteristics capacitance vs. drain-to-source voltage 200 c (picofarads) bv 0 -10 -20 -30 -40 150 100 50 0 -2-4-6-8-10 -5 -4 -3 -2 -1 -50 0 50 100 150 1.1 1.0 0.9 1.4 1.2 1.0 0.8 0.6 2.0 1.6 1.2 0.8 0.4 0 -10 -8 -6 -4 -2 -50 0 50 100 150 0 -0.8 -1.6 -2.4 -3.2 -4.0 15 12 9 6 3 f = 1mhz 200 pf 75 pf t = -55 a c t a = 150 c t = 25 a c 0.5 1.0 1.5 2.0 2.5 0 0 v ds = -25v 0 0 0 bv dss (normalized) t j ( c) i d (amperes) bv dss variation with temperature r ds(on) (ohms) v gs = -5v v gs = -10v t j ( c) v gs(th) (normalized) r ds(on) (normalized) v (th) and r ds variation with temperature v gs (volts) i d (amperes) v (th) @ -1ma r ds(on) @ -10v, -0.75a q g (nanocoulombs) v ds (volts) v ds = -10v v ds = -40v v gs (volts) c iss c oss c rss TP0606/tp0610 typical performance curves
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